SiC and GaN: So-called “broadband” components

In addition to traditional silicon technologies which are the basis of MOSFET or IGBT transistors, two new technologies based on “so-called broadband” materials are added: Silicon Carbide (SiC) and Gallium Nitride (GaN) which present better thermal and switching performance as shown in the graphs below.
These new technologies therefore open the way to very significant reductions in electrical consumption in numerous electronic equipment.

Why “broadband”?
SiC and GaN are called broadband because they have a wide band gap, that is to say a large energy difference between their valence band (energy band where the electrons contributing to cohesion are located local crystal) and their conduction band. This property allows them to operate at higher frequencies than narrow-band materials such as silicon, making them useful for high-frequency applications such as wireless communications, radar, power amplifiers, etc. .

Thermal resistance
Additionally, SiC and GaN-based devices have lower thermal resistance than silicon-based devices, meaning they can dissipate heat more efficiently and therefore operate at higher temperatures. This allows for greater power density and a reduction in device size and cost.
The thermal conductivity of SiC (5 W/cmK) higher than that of GaN (1.3 W/cmK) or Si (1.5 W/cmK).

In sum, the broadband property of SiC and GaN materials offers significant advantages for high-frequency and high-power electronic applications, making them very promising materials for the future of the industry, especially for electric vehicles. .