Replay | New X-ray analysis techniques for characterising the performance of semiconductors for electronics
New X-ray analysis techniques for characterising the performance of semiconductors for electronics
On ESRF’s BM05 synchrotron beamline, Bragg diffraction is used to probe the crystal structure by measuring the intensity of diffracted X-rays at specific angles, providing information on lattice quality and structural defects.
In addition, the XBIC technique uses a focused X-ray beam to generate charge carriers inside a semiconductor, enabling spatial mapping of the electrical response and identification of inhomogeneities. The combination of these methods provides a comprehensive assessment of the structural and electronic properties of crystalline and semiconductor materials.
In this video, Pierre Everaere, an ESRF engineer and contributor to the Nanoelec/Carac programme, explains these characterisation techniques, with particular reference to the capabilities of the BM05 beamline. He gives several specific experimental examples of these new techniques under development, on a wide range of materials, including diamond, silicon and gallium nitride.