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New memory technologies

New technologies

Faced with the limits imposed by the physics of semiconductors which are increasingly felt, several emerging technologies promise to revolutionize the field of memories.

The CEA -Leti works in several directions, some of which are supported by three European programs (3eFerro, StorAIge and BeFerroSynaptic) also involving STMicroelectronics, IBM, Thales and Ford.

These new technologies offer differentiated benefits such as energy efficiency, storage capacity, reduced access times and reliability.

  1. Magnetic memories (SOT-MRAM)
  2. Phase change memories (PCRAM or PCM)
  3. Resistive memories (ReRAM or RRAM) split into two categories: CBRAM and OxRAM
  4. Ferroelectric memories (FeRAM or FRAM)

To find out more: CAP on new memories – CEA, September 2022

 

Nouvelles mémoires
Nouvelles mémoires

 

 

We can also note other fields of development:

  • Holographic Desktop Storage System (HDSS) memories: This approach stores data as holograms, providing impressive storage capabilities (of the order of a tera-bit in the volume of a sugar cube).
  • Chemical or quantum memories: Researchers are exploring these memories to manage gigantic capacities. The data would be encoded in arrangements of molecules, or even at the quantum scale.